+44 1625708989Low-Temperature Fabrication of Silicon Nitride Thin Films from a SiH4+N2 Gas Mixture by Controlling SiNx Nanoparticle Growth in Multi-Hollow Remote Plasma Chemical Vapor
Author(s): Kunihiro KamatakiSilicon nitride (SiNx) is widely used in Si and III-V electronic and optoelectronic technologies [1]. For example,
SiNx thin films are used as the passivation layer to protect semiconductor devices and as the gate dielectric layer in
Thin-Film Transistors (TFTs) [2]. Research on SiNx thin films has been directed towards improving the control of
the hydrogen content, refractive index, and extinction coefficient of light.
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